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 INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2954
DESCRIPTION *Low Noise and High Gain NF = 2.3 dB TYP. ; S21e2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; S21e2 = 12.5 dB TYP. @ f = 500 MHz
APPLICATIONS *Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
35
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
0.15
A
PC
Collector Power Dissipation @TC=25
2
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2954
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1
A
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
30
200
fT
Current-Gain--Bandwidth Product
IC= 50mA ; VCE= 10V
3.0
4.0
GHz
Cre
2
Feed-Back Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz IC= 50mA ; VCE= 10V;f= 500MHz RG= 50 IC= 30mA ; VCE= 10V;f= 500MHz RG= 50
1.1
1.8
pF
S21e
Insertion Power Gain
10
12.5
dB
NF
Noise Figure
2.4
4.0
dB
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2954
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2954
isc Websitewww.iscsemi.cn
4
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2954
isc Websitewww.iscsemi.cn


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